Preparation and characterization of copper thin films using electrochemical deposition
Abstract
In this research, copper films were prepared. The thickness of the prepared films increased with decreasing deposition time, acid function, and deposition current, reaching 140.6, 258.2, and 372.7 for samples ACuITO, BCuITO, and CCuITO, respectively. The results of the cyclic voltage (CV) measurements obtained indicated that the reduction voltage increased from -0.158 to -0.221 over a period of time from 5 to 15 minutes, and the oxidation voltage also increased from -0.175 to -0.227, while the oxidation current decreased from 0.147 to 0.0234 amps. The reduction current increased from -0.0256 to -0.0401. The results of current density to voltage indicated that current density increases with increasing voltage, reaching its highest value at 700 millivolts, reaching 3.7 milliamperes per square centimeter. The results of the Hall effect showed that the type of deposited films was (-RH, n-type) and the electrical conductivity of the prepared films was 7x10-3, 2.20x10-2, and 5.15x10-2 (Ω cm)-1 for samples ACuITO, BCuITO, and CCuITO, respectively.
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